Plasma physics and high-power electronics division
 
 
 
   

Department of plasma technology physics


Facilities

 
1. CVD reactor with cylindrical microwave resonator

Setup for chemical vapour deposition of diamond films on substrates up to 75 mm diameter. Microwave radiation with frequency 2.45 GHz from 5 kW magnetron is used for plasma creation. Reactor operates in CW mode.

 References:
1. Vikharev A.L., Gorbachev A.M., Muchnikov A.B., Radishev D.B., Kopelovich E.A., Troitskiy M.M., Investigation of the optimized parameters of microwave plasma-assisted chemical vapor deposition reactor operation in a pulsed mode, J. Phys. D: Appl. Phys., 2012, v.45, 395202
2. A. L. Vikharev, A. M. Gorbachev, A. B. Muchnikov and D. B. Radishchev, Study of microwave plasma-assisted chemical vapor deposition of poly-and single-crystalline diamond films, Radiophysics and Quantum Electronics, 50 (2007) N 10-11, 913

 
2. CVD reactor with ellipsoidal microwave resonator

Setup for chemical vapour deposition of diamond films on substrates up to 75 mm diameter. Microwave radiation with frequency 2.45 GHz from 6 kW magnetron is used for plasma creation. Reactor operates in CW mode.

References:
AIXTRON
CVD diamond
   
3. CVD reactor with 28 GHz gyrotron

Setup for chemical vapour deposition of diamond films on substrates up to 100 mm diameter. Microwave radiation of gyrotron with frequency 28 GHz and power up to 15 kW is used for plasma creation. Reactor operates in CW mode.

CVD method of high quality polycrystalline diamond films growth was implemented, with linear growth rate of 10-15 μm/hour, which is 5-7 times higher than the growth rate of diamond films with the same quality in conventional 2.45 GHz CVD reactors.

References:
 
1. A. L. Vikharev, A.M. Gorbachev, A.V. Kozlov, V.A. Koldanov, A.G. Litvak, N.M. Ovechkin, D.B. Radishev, Yu.V. Bykov, M. Caplan, Diamond films grown by millimeter wave plasma-assisted CVD reactor, Diamond and Related Materials, 15 (2006) 502
2. A.L. Vikharev, A.M. Gorbachev, A.V. Kozlov, D.B. Radishev, A.B. Muchnikov "Microcrystalline diamond growth in presence of argon in millimeter wave plasma-assisted CVD reactor", Diamond and Related Materials, 17 (2008) 1055

   
4. CVD reactor for diamond delta-doping

Setup for chemical vapour deposition of diamond layers on single-crystal diamond substrates. Setup implements the technology of delta-doping of diamond: creation of thin (few nanometers thick) layer of heavily boron doped diamond buried into non-doped defect-free high quality CVD diamond. Using this reactor the technology was developed for growth of single-crystal diamond with heavily boron doped layers 1-2 nm thick with boron concentration of (5-10) 1020 cm-3.

References:
A.L. Vikharev, A.M. Gorbachev, M.A. Lobaev, A.B. Muchnikov, D.B. Radishev, V.A. Isaev, V.V. Chernov, S.A. Bogdanov, M.N. Drozdov, J.E. Butler. Novel microwave plasma assisted CVD reactor for diamond delta doping // Physica Status Solidi RRL, v.10, Issue 4, 2016, pp. 324–327, http://dx.doi.org/10.1002/pssr.201510453

 


5. CVD reactor with multimode microwave cavity

Setup for chemical vapour deposition of diamond films on substrates up to 80 mm diameter. Microwave radiation with frequency 2.45 GHz from 10 kW magnetron is used for plasma creation. Reactor operates both in CW and in pulse-periodic mode.

References:
A.L. Vikharev, A.M. Gorbachev, M.A. Lobaev, D.B. Radishev, Multimode cavity type MPACVD reactor for large area diamond film deposition, Diamond and Related Materials, Volume 83, March 2018, Pages 8-14, https://doi.org/10.1016/j.diamond.2018.01.011